TK4P60DB(T6RSS-Q)

Mfr.Part #
TK4P60DB(T6RSS-Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 600V 3.7A DPAK

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3.7A (Ta)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
540 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
80W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
2Ohm @ 1.9A, 10V
Supplier Device Package :
D-Pak
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.4V @ 1mA
Datasheets
TK4P60DB(T6RSS-Q)

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