GAN063-650WSAQ

Mfr.Part #
GAN063-650WSAQ
Manufacturer
Nexperia
Package/Case
-
Datasheet
Download
Description
GANFET N-CH 650V 34.5A TO247-3

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
34.5A (Ta)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1000 pF @ 400 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
143W (Ta)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
60mOhm @ 25A, 10V
Supplier Device Package :
TO-247-3
Technology :
GaNFET (Cascode Gallium Nitride FET)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Datasheets
GAN063-650WSAQ

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GAN041-650WSBQ Nexperia 6,500 GAN041-650WSB/SOT429/TO-247