- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta)
- Drain to Source Voltage (Vdss) :
- 65 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 0.45 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 52 pF @ 32.5 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Power Dissipation (Max) :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 130mOhm @ 500mA, 5V
- Supplier Device Package :
- Die
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -4V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- EPC8009
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