ZVP3310FTA, SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Post Date: 2023-01-31

微信截图_20230131114045


Description and Applications:

This MOSFET ZVP3310FTA is designed to minimize the on-state resistance

(RDS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

· Load Switching



Block Diagrams:

微信截图_20230131114240

Specifications:

Product AttributeAttribute Value
Manufacturer:Diodes Incorporated
Product Category:MOSFET
RoHS: Yes
Technology:Si
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor Polarity:P-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:100 V
Id - Continuous Drain Current:75 mA
Rds On - Drain-Source Resistance:20 Ohms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:1.5 V
Qg - Gate Charge:-
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:330 mW
Channel Mode:Enhancement
Series:ZVP3310
Packaging:Reel
Packaging:Cut Tape
Packaging:MouseReel
Brand:Diodes Incorporated
Configuration:Single
Fall Time:8 ns
Forward Transconductance - Min:50 mS
Height:1.02 mm
Length:3.04 mm
Product:MOSFET Small Signal
Product Type:MOSFET
Rise Time:8 ns
Factory Pack Quantity:3000
Subcategory:MOSFETs
Transistor Type:1 P-Channel
Type:FET
Typical Turn-Off Delay Time:8 ns
Typical Turn-On Delay Time:8 ns
Width:1.4 mm
Unit Weight:0.000282 oz