Gavin@icchipshop.com
BCP5616QTA, 80V NPN MEDIUM POWER TRANSISTOR IN SOT223
Post Date: 2023-01-31
This Bipolar Junction Transistor (BJT) BCP5616QTA is designed to meet the stringent requirements of Automotive Applications.
Block Diagrams:
Specifications:
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer: | Diodes Incorporated |
| Product Category: | Bipolar Transistors - BJT |
| RoHS: | Yes |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-3 |
| Transistor Polarity: | NPN |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector- Base Voltage VCBO: | 100 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Maximum DC Collector Current: | 1 A |
| Pd - Power Dissipation: | 2 W |
| Gain Bandwidth Product fT: | 150 MHz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Diodes Incorporated |
| Continuous Collector Current: | 1 A |
| DC Collector/Base Gain hfe Min: | 100 |
| DC Current Gain hFE Max: | 250 |
| Product Type: | BJTs - Bipolar Transistors |
| Factory Pack Quantity: | 1000 |
| Subcategory: | Transistors |
| Technology: | Si |
| Unit Weight: | 0.003951 oz |
