BCP5616QTA, 80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Post Date: 2023-01-31

微信截图_20230131114508


This Bipolar Junction Transistor (BJT) BCP5616QTA is designed to meet the stringent requirements of Automotive Applications.


Block Diagrams:

微信截图_20230131114721


Specifications:

Product AttributeAttribute Value
Manufacturer:Diodes Incorporated
Product Category:Bipolar Transistors - BJT
RoHS:Yes
Mounting Style:SMD/SMT
Package / Case:SOT-223-3
Transistor Polarity:NPN
Configuration:Single
Collector- Emitter Voltage VCEO Max:80 V
Collector- Base Voltage VCBO:100 V
Emitter- Base Voltage VEBO:5 V
Collector-Emitter Saturation Voltage:500 mV
Maximum DC Collector Current:1 A
Pd - Power Dissipation:2 W
Gain Bandwidth Product fT:150 MHz
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Qualification:AEC-Q101
Packaging:Reel
Packaging:Cut Tape
Packaging:MouseReel
Brand:Diodes Incorporated
Continuous Collector Current:1 A
DC Collector/Base Gain hfe Min:100
DC Current Gain hFE Max:250
Product Type:BJTs - Bipolar Transistors
Factory Pack Quantity:1000
Subcategory:Transistors
Technology:Si
Unit Weight:0.003951 oz